document number: 94094 for tec hnical questions, contact: diodestech@vishay.com www.vishay.com revision: 26-apr-10 1 fast soft recovery rectifier diode, 10 a vs-10etf..spbf soft recovery series vishay high power products features ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec ? halogen-free according to iec 61249-2-21 definition ? designed and qualified for industrial level applications ? output rectification and freewheeling in inverters, choppers and converters ? input rectifications wher e severe restrictions on conducted emi should be met description the vs-10etf..spbf fast soft re covery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. the glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. product summary v f at 10 a < 1.33 v t rr 80 ns v rrm 1000 v/1200 v d 2 pak (smd-220) base common cathode + 3 anode 2 1 anode -- major ratings and characteristics symbol characteristics values units i f(av) sinusoidal waveform 10 a v rrm 1000/1200 v i fsm 160 a v f 10 a, t j = 25 c 1.33 v t rr 1 a, 100 a/s 80 ns t j range - 40 to 150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non- repetitive peak reverse voltage v i rrm at 150 c ma vs-10ETF10SPBF 1000 1100 4 vs-10etf12spbf 1200 1300 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 125 c, 180 conduction half sine wave 10 a maximum peak one cycle non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 160 10 ms sine pulse, no voltage reapplied 185 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 128 a 2 s 10 ms sine pulse, no voltage reapplied 180 maximum i 2 t for fusing i 2 t t = 0.1 ms to 10 ms, no voltage reapplied 1800 a 2 s
www.vishay.com for technical questions, contact: diodestech@vishay.com document number: 94094 2 revision: 26-apr-10 vs-10etf..spbf soft recovery series vishay high power products fast soft recovery rectifier diode, 10 a note (1) when mounted on 1" square (650 mm 2 ) pcb of fr-4 or g-10 material 4 oz. (140 m) copper 40 c/w. for recommended footprint and soldering techniques refer to application note #an-994. electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 10 a, t j = 25 c 1.33 v forward slope resistance r t t j = 150 c 22.9 m threshold voltage v f(to) 0.96 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 4 recovery characteristics parameter symbol test conditions values units reverse recovery time t rr i f at 10 apk 25 a/s 25 c 310 ns reverse recovery current i rr 4.7 a reverse recovery charge q rr 1.05 c typical snap factor s 0.6 i fm t rr dir dt i rm(rec) q rr t thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, junction to case r thjc dc operation 1.5 c/w maximum thermal resistance, junction to ambient (pcb mount) r thja (1) 62 soldering temperature t s 240 c approximate weight 2g 0.07 oz. marking device case style d 2 pak (smd-220) 10etf10s 10etf12s
document number: 94094 for tec hnical questions, contact: diodestech@vishay.com www.vishay.com revision: 26-apr-10 3 vs-10etf..spbf soft recovery series fast soft recovery rectifier diode, 10 a vishay high power products fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current 120 115 150 0 6 maximum allowable case temperature (c) average forward current (a) 4 28 130 10 12 140 125 10etf.. series r thjc (dc) = 1.5 c/w conduction angle 30 60 90 120 180 145 135 ? 120 115 150 010 maximum allowable case temperature (c) average forward current (a) 6 212 130 16 135 125 48 14 140 145 ? conduction period 10etf.. series r thjc (dc) = 1.5 c/w 30 60 90 120 180 dc 4 0 16 0 maximum average forward power loss (w) average forward current (a) 8 10 10 12 8 46 2 2 6 14 10etf.. series t j = 150 c conduction angle rms limit 180 120 90 60 30 ? 4 0 24 0 maximum average forward power loss (w) average forward current (a) 12 12 16 16 8 48 10etf.. series t j = 150 c ? conduction period rms limit 180 120 90 60 30 dc 20 2 6 10 14 180 80 40 1 10 100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 140 60 100 120 10etf.. series at any rated load condition and with rated v rrm applied following surge. initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s 160 180 80 40 0.01 0.1 1 peak half sine wave forward current (a) pulse train duration (s) 140 60 100 120 160 200 maximum non-repetitive surge current versus pulse train duration. initial t j = 150 c no voltage reapplied rated v rrm reapplied 10etf.. series
www.vishay.com for technical questions, contact: diodestech@vishay.com document number: 94094 4 revision: 26-apr-10 vs-10etf..spbf soft recovery series vishay high power products fast soft recovery rectifier diode, 10 a fig. 7 - forward voltage drop characteristics fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery charge characteristics, t j = 150 c fig. 12 - recovery current characteristics, t j = 25 c 1000 10 1 0.5 1.0 1.5 2.0 2.5 4.5 instantaneous forward current (a) instantaneous forward voltage (v) 10etf.. series t j = 150 c t j = 25 c 100 3.0 3.5 4.0 0.6 0.3 0 0 40 80 120 160 200 t rr - maximum reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.1 0.2 10etf.. series t j = 25 c i fm = 10 a i fm = 1 a i fm = 8 a i fm = 5 a i fm = 2 a 0.4 0.5 0.8 0.6 0 0 40 80 120 160 200 t rr - maximum reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.2 0.4 10etf.. series t j = 150 c i fm = 10 a i fm = 1 a i fm = 8 a i fm = 5 a i fm = 2 a 2.0 0 0 40 80 120 160 200 q rr - maximum reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 0.4 1.2 0.8 1.6 10etf.. series t j = 25 c i fm = 10 a i fm = 8 a i fm = 5 a i fm = 2 a i fm = 1 a 5 3 0 0 40 80 120 160 200 q rr - maximum reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 1 2 4 10etf.. series t j = 150 c i fm = 1 a i fm = 2 a i fm = 5 a i fm = 8 a i fm = 10 a 20 12 0 0 40 80 120 160 200 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 4 8 16 10etf.. series t j = 25 c i fm = 10 a i fm = 8 a i fm = 5 a i fm = 2 a i fm = 1 a
document number: 94094 for tec hnical questions, contact: diodestech@vishay.com www.vishay.com revision: 26-apr-10 5 vs-10etf..spbf soft recovery series fast soft recovery rectifier diode, 10 a vishay high power products fig. 13 - recovery curre nt characteristics, t j = 150 c fig. 14 - thermal impedance z thjc characteristics 25 15 0 0 40 80 120 160 200 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 5 10 20 10etf.. series t j = 150 c i fm = 10 a i fm = 8 a i fm = 5 a i fm = 2 a i fm = 1 a 0.001 1 10 10 0.001 0.01 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (c/w) single pulse 10etf.. series steady state value (dc operation) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 0.1 0.01
www.vishay.com for technical questions, contact: diodestech@vishay.com document number: 94094 6 revision: 26-apr-10 vs-10etf..spbf soft recovery series vishay high power products fast soft recovery rectifier diode, 10 a ordering information table links to related documents dimensions www.vishay.com/doc?95046 part marking information www.vishay.com/doc?95054 packaging information www.vishay.com/doc?95032 10 = 1000 v 12 = 1200 v 2 - current rating (10 = 10 a) 3 - circuit configuration: e = single diode 4 - package: t = d 2 pak (to-220ac) 5 - type of silicon: f = fast soft recovery rectifier 6 - voltage code x 100 = v rrm 7 - s = surface mountable - pbf = lead (pb)-free 8 - none = tube trr = tape and reel (right oriented) trl = tape and reel (left oriented) 9 1 - hpp product suffix device code 5 1 3 24 6789 vs- 10 e t f 12 s trl pbf
document number: 95046 for technical questions within your region, please contact one of the following: www.vishay.com revision: 31-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 d 2 pak outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and toleranc ing per asme y14.5 m-1994 (2) dimension d and e do not include mold flash. mold flash sh all not exceed 0.127 mm (0.005") per side. these dimens ions are measu red at the outmost extremes of the plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) datum a and b to be determined at datum plane h (6) controlling dimension: inch (7) outline conforms to jedec outline to-263ab symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 8.00 0.270 0.315 3 a1 0.00 0.254 0.000 0.010 e 9.65 10.67 0.380 0.420 2, 3 b 0.51 0.99 0.020 0.039 e1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.020 0.035 4 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 4 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 3 c1 0.38 0.58 0.015 0.023 4 l2 1.27 1.78 0.050 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.51 9.65 0.335 0.380 2 l4 4.78 5.28 0.188 0.208 c b detail a c2 a a a 0.004 b m a lead tip (3) (3) view a - a (e) (d1) e1 b h a1 detail ?a? rotated 90 cw scale: 8 :1 l gauge plane 0 to 8 l3 l4 seating plane section b - b and c - c scale: none (4) (4) ( b , b 2) b 1, b 3 (c) c1 base metal plating conforms to jedec outline d 2 pak (smd-220) 13 2 d c a l2 e (2)(3) (2) 4 h bb 2 x b 2 x b 2 l1 0.010 a b mm (3) e 2 x pad layout min. 11.00 (0.43) min. 9.65 (0.3 8 ) min. 3. 8 1 (0.15) min. 2.32 (0.0 8 ) 17.90 (0.70) 15.00 (0.625) 2.64 (0.103) 2.41 (0.096) lead assignments diodes 1. - anode (two die)/open (one die) 2., 4. - cathode 3. - anode
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